Abstract
GaN epilayers grown on sapphire substrates nitridated for various lengthy periods were investigated by light scattering tomography (LST) and Raman scattering. In the LST images of the plane-view epilayers, the light scattering defects distribute in [ ] directions. The defect density is lower in epilayer grown on substrate nitridated for a longer period. The defects are believed to be straight threading edge dislocations on { } planes. The Raman shift of E-2 mode is larger in the sample grown on substrate nitridated for a longer period. Our results show that the stress is higher in the sample with fewer dislocations.
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