Abstract
We have observed precise geometrical correlation between ``dark-line''-type defects characteristic of the rapid degradation mode of (optically pumped) AlGaAs DH laser material with etch pit features in the vicinity of the GaAs/p-Alx Ga1−x As heteroboundary. The patterns observed strongly suggest that the degradation is associated with creation or possibly decoration of dislocation lines inclined to the {100} junction plane, and that the commonly observed 〈100〉 orientation of the dark lines is due to statistical aggregation of such inclined lines.
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