Abstract
The behavior of dark line defects (DLDs) in molecular beam epitaxy grown InGaAs/GaAs strained layer superlattices (SLSs) has been studied by photoluminescence (PL) topography. The density of DLDs parallel to the [011] was larger than that of those perpendicular to the [011] and increased with increasing number of SLS periods. These DLDs were considered to be originated from the locally deformed lattices by the misfit stress. The relaxation model of stress in MBE-grown InGaAs/GaAs SLSs was proposed from the obtained results.
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