Abstract
Crystallization was induced in amorphous Ge 2 Sb 2 Te 5 and AgInSbTe films by femtosecond laser with an average power of 20mW at a frequency of 1 kHz and a pulsed width of 120 fs. Transmission electron microscopy observes the morphology of Ge 2 Sb 2 Te 5 and AgInSbTe films before and after irradiation of femtosecond laser pulses and confirms the existence of crystalline state.
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