Abstract
High resolution synchrotron radiation has been used to investigate the occurrence of coherent hybrid reflections (CHR) in the In0.49Ga0.51P/GaAs(001) structure. Several φ scans at the 002 layer reflection were carried out. The scanned φ intervals are correlated by the [001] axis symmetry and should present the same pattern. A break in the symmetry is observed due to constructive/destructive interference of the hybrid amplitudes with the amplitude from the 002 layer reflection. The effects of substrate miscut and interface distance are taken into account to explain the observed patterns. The application of CHR as a high sensitive tool to analyze epitaxial growth is discussed.
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