Abstract
We have made experimental studies of low-temperature, high-magnetic field electronic transport in layered, three-dimensional semiconductor structures. In fields that produce the integer quantum Hall effect for transport parallel to the layers, we find deep minima in the vertical conductance ${G}_{\mathrm{zz}}$. Between these quantum Hall states, the size dependence of ${G}_{\mathrm{zz}}$ indicates that vertical transport is through the bulk. Within quantum Hall states, we find that vertical transport is along the surface of the sample, via a ``sheath'' of extended surface states. This surface sheath is a novel two-dimensional system that exhibits a metallic conductivity $\ensuremath{\ll}{e}^{2}/h$.
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