Abstract
Two phenomena are observed for transverse magnetotunneling (B⊥J) from an accumulation layer in n − GaAs-undoped Al xGa 1−xAs− n + GaAs capacitors. One effect is a strong dependence of tunnel currents, J, at high applied voltage and high current densities, on the angle between J and the magnetic field, B. The second effect is the observation of structure in tunnel currents for applied voltages between 0.15 V and 0.6 V which is interpreted to result from tunneling into Landau levels formed in the n + GaAs electrode.
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