Abstract
We report on the experimental observation of the radiative recombination of localized biexcitons at low temperature (5 K) in ZnO/ZnMgO multi-quantum wells grown by laser-molecular-beam epitaxy on a lattice-matched ScAlMgO4 substrate (0001). The emission components due to the recombinations of localized excitons and biexcitons and due to the exciton–exciton scattering were verified by examining their relative energy positions and intensity dependence on excitation power density. The excitation threshold for biexciton emission was significantly lower than that for exciton–exciton scattering. The binding energy of biexcitons in multi-quantum wells is largely enhanced compared with the corresponding value of bulk ZnO.
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