Abstract
Over the past decade, tremendous effort has been put into developing 2D semiconductor materials with a tunable bandgap by alloying different individual components. However, the bandgap bowing effect has hindered the ability to arbitrary control the emission of these alloys. In this study, we report the chemical vapor deposition growth of a graded-composition Mo1−xWxS2 monolayer alloy, in which the photoluminescence emission energy exhibits nearly linear variation in the bandgap, indicating the vanishing of the bandgap bowing effect. Polarized Raman measurements show that the polarization is composition dependent, and a large symmetry breaking occurs at the point where the bandgap bowing effect vanishes. This suggests that the vanishing of the bowing effect may be attributed to the symmetry breaking induced by compressive strain. Our findings demonstrate a significant advancement in the synthesis of alloys for future use.
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