Abstract
Capacitance spectroscopy studies of lattice defects intentionally introduced into GaP diodes by 1-MeV electron irradiation have shown a very large enhancement in the defect annealing rate under conditions of e-h recombination. Six deep levels are observed and all exhibit recombination enhanced annealing. Four of the levels anneal athermally during recombination having the same rate at 100 K as at 300 K. Comparisons of the thermal annealing activation energy and the energy released during hole capture indicate that the observed athermal enhancement is a natural consequence of the wide GaP band gap.
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