Abstract
Our measurement results have shown that bilayer graphene exhibits an unexpected sharp transition of the resistance value in the temperature region 200~250 K. We argue that this behavior originates from the interlayer ripple scattering effect between the top and bottom ripple graphene layer. The inter-scattering can mimic the Coulomb scattering but is strongly dependent on temperature. The observed behavior is consistent with the theoretical prediction that charged impurities are the dominant scatters in bilayer graphene. The resistance increase with increasing perpendicular magnetic field strongly supports the postulate that magnetic field induces an excitonic gap in bilayer graphene. Our results reveal that the relative change of resistance induced by magnetic field in the bilayer graphene shows an anomalous thermally activated property.
Highlights
The electronic properties of monolayer graphene have been extensively studied due to its intriguing energy band structure with linear dispersion around the Dirac point and chirality exhibiting Berry phase of π [1]
The bilayer graphene with a Bernal (A-B) configuration loses some features of monolayer graphene and has a unique band structure where the conduction and valence bands are in contact with a nearly quadratic dispersion [5]
It has been shown that Raman spectroscopy is a reliable, nondestructive tool for identifying the number of graphene layers and it can be done through the 2D band deconvolution procedure [20,21,22]
Summary
The electronic properties of monolayer graphene have been extensively studied due to its intriguing energy band structure with linear dispersion around the Dirac point and chirality exhibiting Berry phase of π [1]. Bilayer graphene became a subject of intense research due to the low-energy Hamiltonian of chiral quasiparticles and a Berry phase of 2π [5,6,7,8]. It has a double-degeneracy zero-energy Landau level that incorporates two different orbital states with the same energy under an external magnetic field.
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