Abstract
Anisotropy in the substrate current has been observed experimentally in Si MOSFETs on the (100) surface. The impact ionization rate along the (001) axis becomes larger than that along the (011) axis. The ratio of the ionization rate between the two directions has been found to be as high as 5 at 81 K. This anisotropy can be explained by the anisotropic threshold energy for impact ionization. Furthermore, it has been found that the anisotropy ratio increases with a decrease in temperature and the length of the pinch-off region in MOSFETs. These results suggest that the non-stationary transport in the pinch-off region can lead to the enhancement of the anisotropy in the impact ionization.
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