Abstract
Admittance spectroscopy is used to study a low-temperature (LT)-grown relaxed In0.12Ga0.88As/GaAs p-i-n superlattice. The capacitance-frequency spectra show two step-like trapping effects which are explained by the existence of two traps (Ea=0.73 eV, σ= 4.6 ×10-11 cm2 and Ea=0.75 eV, σ=3.7×10-15 cm2) in the LT-grown superlattice region. These two traps are the dominating defects observed in deep-level transient spectroscopy with one being a majority trap and the other being a minority trap. The emission parameters and photo-capacitance quenching effect for the 0.75 eV trap agree with those known for EL2 defects, suggesting that the EL2 defect is strongly enhanced in InGaAs/GaAs by LT growth.
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