Abstract

A Luminescence band centred at 1.13 eV, with a width of 140 meV at 77K, has been observed in GaAs after plastic deformation at 400°C by uniaxial compression. This band is polarized normally to the primary glide plane, which suggests that it comes from dislocations rather than from point defects. A configuration coordinate diagram for this dislocation level is finally proposed.

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