Abstract
We report the direct observation of \ensuremath{\Gamma}-X resonances in type-I GaAs/AlAs semiconductor superlattices under an electric field. Photoluminescence (PL) associated with the first ${\mathrm{X}}_{\mathrm{z}}$ state in the AlAs and the first \ensuremath{\Gamma} heavy-hole state in the GaAs was found in type-I superlattices. The PL strongly increased its intensity due to \ensuremath{\Gamma}-X mixing, by tuning the resonance between the ${\mathrm{X}}_{\mathrm{z}}$ state and the second \ensuremath{\Gamma}-electron state in the adjacent GaAs layer. This observation gives clear evidence that \ensuremath{\Gamma}-X scattering and mixing often occur even in type-I superlattices under an electric field.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
