Abstract
Nanosize porous Si is made by two step controlled etching of Si. The first etching step is carried on the Si surface and the second is performed after deposition of 75 Å of platinum on the formed surface. A platinum silicide structure with a size of less than 25 nm is formed on the porous Si surface, as measured with an Atomic Forced Microscope (AFM). Differential resistance curve as a function of voltage in 77 K and 100 K shows a negative differential resistance and indicates the effect of quantum tunneling. In general form, the ratio of maximum to minimum tunneling current (PVR) and the number of peaks in I–V curves reduces by increasing the temperature. However, due to accumulation of carriers behind the potential barrier and superposition of several peaks, it is observed that the PVR increases at 100 K and the maximum PVR at 100 K is 189.6.
Highlights
Devices which exhibit negative differential resistance are widely used in oscillators, photosensitive, memory, computing technology and microwave devices
Due to accumulation of carriers behind the potential barrier and superposition of several peaks, it is seen that the PVR increases at 100 K and the maximum PVR at 100 K is 189.6
Atomic Forced Microscope (AFM) images taken from a 500 nm by 500 nm samples in this structure are shown in Figures 3 and 4
Summary
Devices which exhibit negative differential resistance are widely used in oscillators, photosensitive, memory, computing technology and microwave devices. The observation of NDR in an IR detector with non uniform array of nanoscale platinum silicide and nanosize porous silicon with a high peak-to-valley ratio in metal–semiconductor-metal (MSM) structure is investigated. This structure is made without using any lithography process. Due to accumulation of carriers behind the potential barrier and superposition of several peaks, it is seen that the PVR increases at 100 K and the maximum PVR at 100 K is 189.6 This negative differential resistance, as will be discussed can be explained by quantum tunneling effect.
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