O-band InAs/GaAs quantum dot laser monolithically integrated on exact (0 0 1) Si substrate

Abstract

The concept of high-efficiency, high-reliability and low-threshold electrically pumped lasers monolithically grown on silicon has attracted great attention over the past several decades, as a promising on-chip optical source for Si photonics. In this paper, we report an electrically pumped continuous-wave (CW) 1.3 µm InAs/GaAs quantum dot (QD) lasers grown on a complementary metal-oxidesemiconductor (CMOS) compatible Si exact (0 0 1) substrate with reduced GaAs buffer thickness down to ∼2 µm. A threshold current density (Jth) as low as ∼160 A/cm2 has been achieved at room temperature. The characteristic temperature (T0) obtained is ∼60.8 K and laser operation is observed up to 52 °C under CW mode. These results suggest that an O-band InAs/GaAs QD laser could be very promising to develop a monolithically integrated on-chip optical source for Si photonics.