Abstract
In this letter, we report on the design, fabrication, and performance of a hetero-integrated III-V/silicon distributed-feedback (DFB) laser in the O-band, with improved integration compatibility with the existing silicon photonics platforms. This structure uses amorphous silicon deposited at a low temperature (350 °C) to efficiently couple light from the III-V region into a thin silicon-on-insulator waveguide, without disrupting other existing silicon components. Continuous-wave regime is achieved at 25 °C, while lasing threshold and maximum output power in the waveguides are 50 mA and 33.6 mW, respectively. The maximum power coupled into a single-mode fiber at one end of the DFB is up to 4.7 mW.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
