Abstract
In order to realize high throughput for industrial application, a new gas cluster ion-assisted deposition system has been developed. Tin-doped indium-oxide (ITO) films were formed by using the O 2 gas cluster ion beam-assisted deposition technique. Large oxygen cluster ions which can transport thousands of atoms in an ion with very low energy per constituent atom were used in this deposition process. The energetic oxygen clusters collapse at the surface and react with the metal atoms. About 10% of atoms are incorporated, when the kinetic energy of the cluster ion is above 5 keV. Interactions between cluster ions and substrate atoms occur in the near-surface region and cluster ions can deposit their energy with a high density in a very localized surface region. The oxidation reaction on the surface can be enhanced by energetic cluster ion bombardment which offers a new technique for ion-assisted thin film formation. Very smooth, highly transparent (>80%) and low resistivity films were obtained by using a 7 keV oxygen cluster ion beam.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
