Abstract
AbstractBiomaterial‐based resistive switching memory is one promising technology that could significantly impact the current direction of non‐volatile memory and neuromorphic computing. Given this, we report the fabrication of a resistive switching (RS) device based on Nymphaea Alba as an active switching layer and investigate its RS properties for memory and neuromorphic computing applications. The Nymphaea Alba switching layer was deposited by the conventional doctor blade method. Further, this is characterized by various analytical techniques. The fabricated device showed bipolar RS behavior and demonstrated good non‐volatile memory properties. Additionally, the device mimics various synaptic properties of the human brain, such as potentiation‐depression, Excitatory post‐synaptic current (EPSC), and Paired‐pulse facilitation (PPF). The charge‐flux relation reveals the non‐ideal memristor‐type behavior of the device. The Ohmic and Child's square law dominates the conduction of the device and the filamentary process responsible for the RS process of the device. These results show that the Nymphaea Alba is a promising biomaterial for non‐volatile memory applications.
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