Abstract
Several ion implantation applications achieve superior yields when the ion beam strikes the wafer with a constant angle of incidence across the entire surface of the wafer. Batch end stations with mechanically scanned disks provide implants with constant incident angle, but may not be economical for low dose implants. A midcurrent implanter having a pick-and-place serial endstation has been designed to provide constant implant angle. The equipment utilizes a novel combination of electrostatic X– Y raster scanning with small mechanical movements of the target to achieve a constant beam incident angle. Scanning and target motion are servoed to beam current variations. Wafers of 200 mm diameter can be implanted at a rate of 250 per hour. A system description and performance measurement results are presented.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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