Abstract
The direct simulation Monte Carlo method is employed to predict the etch rate distribution on Al wafer for a chlorine feed gas flow. The etching process of an Al wafer in a plasma etch reactor is examined by simulating molecular collisions of reactant and product. The surface reaction on the Al wafer is simply modelled by one-step reaction: 3Cl2+2Al → 2AlCl3. The gas flow inside the reactor is compared for six different nozzle locations. The present numerical results show that the etch rate increases with the mass flow rate of source gas Cl2. It is also shown that the flow field inside the reactor is significantly affected by the nozzle locations.
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