Numerical study on temperature rise and structure optimization for a three-phase gas insulated switchgear busbar chamber

Abstract

In order to improve the simulation accuracy of the temperature rise, reduce the operating temperature, and improve the insulation performance of the gas insulated switchgear (GIS) busbar, this paper numerically studied a 252 kV three-phase GIS busbar chamber based on multiphysics coupling method. Various factors affecting busbar electromagnetic loss are analyzed, and the busbar structure is optimized combined with the Taguchi method. Firstly, the loss computational results show that, both skin effect and proximity effect change the conductor current distribution, the skin effect increases the GIS loss by 18.59 W/m (12.2%), and the proximity effect has little effect on the loss. The additional heat loss caused by conductor temperature rise cannot be ignored (13.2%). Secondly, Taguchi performance statistics show that, the conductor thickness (δ) and center distance (d0) have the greatest impact on the maximum temperature and minimum gas breakdown margin of GIS busbar, respectively, with the contribution rate of 80.2% and 65.1%, respectively. Finally, the optimal design parameter combinations with lowest operating temperature and best insulation performance for GIS busbar chamber are obtained with Taguchi method, respectively.