Numerical Study of Temperature and Electric Field Effects on the Total Optical Absorption Coefficient in the Presence of Optical Inter-Conduction-Subband Transitions in InGaN/GaN Single Parabolic Quantum Wells

Abstract

In this paper, we theoretically investigate the total optical coefficient (TOAC) considering 1S-2P and 2S-2P conduction subband transitions in a single parabolic quantum well (SPQW) with an on-center hydrogen-like impurity. Within the framework of the effective-mass approximation, the Schrödinger equation is solved numerically to obtain the eigenvalues and their corresponding eigenvectors using the finite difference method. The calculations are performed for finite confinement potential height, taking into account the dielectric and effective mass mismatches between GaN and InGaN materials under the considered electric field and temperature effects. The temperature dependence of the effective mass, dielectric constant and band gap energy are obtained accordingly. On the one hand, the results show that a significant shift is produced with the variation of both the temperature and the intensity of the electric field. On the other hand, the absorption spectrum is shifted to lower energies with increasing both electric field strength and temperature. Moreover, its amplitude is enhanced with an increase in the intensity of the electric field, and show a slight drop with increasing temperature for the two optical transitions considered. The results show that such parameters can be used to adjust the optical properties of single parabolic Quantum Well for solar cell applications.