Abstract
A quantum-dot-embedded solar cell model with antireflection coating is proposed and studied numerically. The device model was designed by using MATLAB coding. A proper inclusion of quantum-dot-enhanced carrier absorption was achieved through a modified absorption coefficient and a structure dependent carrier lifetime. The transmission matrix and quasi-drift diffusion method were applied to simulate the optical and electrical characteristics of the device. The experimental results were fitted first to validate the model and provide parameters for optimization. The final simulation showed that the power conversion efficiency (PCE) of an ideal InGaP/GaAs+InAs QD dual-junction cell could achieve 39.04%.
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