Abstract
The AlGaN-based ultraviolet light-emitting diodes (UV LEDs) with specific design of polarization-induced p-type doping are investigated numerically. The proposed polarization-doped UV LEDs with different Al content graded AlGaN layers exhibit significant improvement for the light output power and carrier injection efficiency compared with the conventional AlGaN UV LED. The enhanced performance for polarization-doped UV LED is explained by the simulated energy band diagrams, distribution of carrier concentration and radiative recombination rate in the quantum wells.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
