Abstract
The DC common-emitter current gains of abrupt- and graded-junction heterojunction bipolar transistors (HBTs) are studied and compared by numerical simulation. Electron injection across abrupt emitter-base heterojunctions is evaluated by numerically solving the wave equation. A numerical model based on drift-diffusion carrier transport is used for graded-junction HBTs and to assess recombination currents in both the structures. The results demonstrate that the increase in injected electron current afforded by compositional grading is accompanied by an increase in recombination within the space-charge layer. As a result, neither design option has a clear advantage with respect to common-emitter current gain. >
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
