Abstract
In this work we report the results of numerical modeling of the InAs(P) nanowires (NWs)-based photodetectors operating in near infrared (IR) spectral range. We compare photodetector properties for pure InAs, InAs0.7P0.3 and InAs0.53P0.47 alloys. We calculate the performance of InAs(P) NWs-based photodetectors under the assumption of 100% internal quantum efficiency. Our numerical simulations show that both the absorption efficiency and device detectivity depend on the geometrical parameters of NW arrays and their chemical composition. However, the maximal point of detectivity does not fully correspond to the maximal absorption. The obtained results demonstrate that InAsP NWs can be considered as a promising material for IR-photodetector development with the improved performance.
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