Abstract
The simulation study is carried out to investigate the performance of organic light-emitting diode (OLED), AZO/NPB/Alq3: Ir(ppy)3/LiF/Al configuration. To minimize the turn-on (knee) voltage, the LiF layer is staked with the organic emissive layer's (OEL's) and cathode. This interface enhances hysteresis of recombination prefactor due to the higher hopping effect of OEL with bilayer cathode unit (LiF/Al). To counteract such improvements, an electron injecting layer (EIL) free OLED is considered to nullify the impact under the thickness optimization of OEL. The maximum light flux of 9.5 × 106 Wm−2 has been achieved for 20 nm thickness of electron emission layer/electron transport layer (EML/ETL) and 10 nm thickness of hole transport layer (HTL). Thus, portrayed different characteristics curve implies the charge density and mean current density is 3 × 1024 m−3, and 1.2 × 106 Am−2 at 1.75 V turn-on (knee) voltages, respectively. The maximum recombination prefactor of 4 × 10−17 m−6 s−1 is found at 300 K for different optoelectronic parameters. This study also offers an alternative way to optimize further the efficiency of the Aluminium doped zinc oxide (AZO) anode contact OLED devices.
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