Numerical study of a high‑performance thin film CIGS solar cell with a-Si and MoTe2 hole transport layer

Abstract

Ultrathin Cu(InGa)Se2 (CIGS) material has become one of the emerging material in the research of solar cell fields due to its excellent optical, electrical and tunable bandgap properties. In this study, we have described a numerical simulation of ultrathin CIGS solar cell using SCAPS-1D program tool based on WS2 as a buffer layer, CIGS as an absorber layer with a-Si/MoTe2 as a hole transport layer (HTL). The proposed study also reveals that a-Si is better choice for HTL as compared to MoTe2 for CIGS solar cell. The cell parameters such as thickness, defect density and acceptor concentration of CIGS absorber layer have been optimized in proposed work. Based on optimization, the maximum power conversion efficiency (PCE) of 30.17% (Voc =1.093Volts,Jsc=32.41 mA/cm2 and FF=85.12%) has been reached for CIGS solar cell with a-Si HTL. The simulation further analyzed at various operating temperature and series resistance for better understanding of the solar device. All these simulation provide noteworthy manifestation for the fabrication of high efficient ultrathin energy harvesting application.