Abstract
An accurate method for the evaluation of breakdown voltages (BVs) in the superjunction-like (SJ-like) power devices is presented. This brief investigates the conventional SJ (c-SJ), the insulator pillar SJ (I-SJ), and the high-permittivity ( $\text{H}{k}$ ) structures. Based on the numerical calculations of the electric field line (EFL) distribution, the electric field profiles along the EFLs can be accurately obtained. This ensures the accurate determination of the impact ionization integrals and BV. The technology computer-aided design (TCAD) simulations confirm the validity of the proposed method. The proposed method could be of great significance for the optimization of the specific ON-resistance ( ${R} _{ \text {ON,sp}}$ ) and could provide a better understanding of the SJ-like power devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
