Abstract
Numerical solutions of recent hydrodynamical models of semiconductors are computed in one-space dimension. Such models describe charge transport in semiconductor devices. Two models are taken into consideration. The first one has been developed by Blotekjaer, Baccarani et al., and the second one by Anile et al. In both cases the system of equations can be written as a convection-diffusion type system, with a right-hand side describing relaxation effects and interaction with a self-consistent electric field. The numerical scheme is a splitting scheme based on the Nessyahu–Tadmor scheme for the hyperbolic step, and a semi-implicit scheme for the relaxation step. The numerical results are compared to detailed Monte-Carlo simulation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Mathematical Models and Methods in Applied Sciences
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
