Abstract
The semiconductor transport equations, including the energy balance equations, are used to numerically model the forward-bias capacitance of Schottky-barrier diodes on n-GaAs. The differential capacitance is determined from the change of electric charge in the semiconductor for an incremental voltage change. The capacitance calculated from this model is compared to capacitance determinations only by solving Poisson's equation. The transport model must be used when the electric current through the device influences the carrier distribution which happens at a forward voltage of approximately 0.8 V.
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