Abstract
The study and design of electronic components, based on ballistic electron transport in nanowires, recently show steep increase of interest. The components can be field effect transistors, resonant tunneling, diodes, lasers, cubits, etc. Previously we carried out numerical simulations of electron transport for energies far from the thresholds (in the case of multichannel scattering). Here we present the results of numerical simulations of electron transport in nanowires near a threshold and compare the conventional and augmented scattering matrices elements.
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