Abstract
Numerical simulations are inevitable for the development and optimization of GaN-based superluminescent light-emitting diodes (SLEDs) for the blue and green spectral region. Depending on their application the devices have to be optimized with respect to given specifications. We discuss the simulation of various device performance parameters as well as the basic calibration of the full 3D device simulator. We use well-characterized SLED devices realized with standard epitaxial structures for the calibration procedure. A comparison between simulated and measured data allows the extraction of important simulation parameters such as the screening factor.
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