Numerical simulation on the impurity photovoltaic (IPV) effect in c-Si wafer-based dual-heterojunction solar cell

Abstract

The impurity photovoltaic effect (IPV) with thallium (TI) impurity has theoretically been investigated in crystalline silicon (c-Si) wafer reigned dual-heterojunction (DH) solar cell that ensures an extended absorption of longer wavelength light with zinc selenide (ZnSe) window and aluminium antimonide (AlSb) back surface layers. The results imply that the incorporation of impurity enhances the photocurrent while the dual-heterojunction ensures the higher V OC of the proposed solar cell structure. The pristine Si (150 µm wafer) solar cell exhibits a power conversion efficiency (PCE) of 35.04% with J SC = 38.85 mA/cm 2 and V OC = 1.05 V, respectively. On the contrary, the introduction of Tl impurity within the bandgap of absorber enhances the PCE to 44.47%, with a J SC = 48.95 mA/cm 2 , V OC = 1.063 V and FF= 85.46%, respectively. This augmentations of the V OC and J SC and hence PCE is originated from the DH structure and longer wavelength light absorption due to impurity-assisted two-step photon upconversion phenomena in the solar cell. • IPV effect in an n + -p-p + Si DH solar cell with Tl impurity has been simulated. • ZnSe and AlSb have been used as window and BSF layers, respectively. • The optimized metal contacts Ti (cathode) and Ni (anode) has been established. • A maximum J SC of 48.95 mA/cm 2 and PCE= 44.47% with V OC = 1.063 V has been achieved. • n + - ZnSe /p- Si /p + - AlSb DH solar cell with Tl impurity shows potential in future.