Abstract

Numerical simulation has been used to investigate the effect of different buffer layer components on the performance of CuInGaSe2 solar cells with SCAPS-1D software. The main photovoltaic parameters of simulated devices: open-circuit voltage (Voc), short-circuit current (Jsc), fill factor (FF), and conversion efficiency (h), areanalysed as a function of thickness and temperature in the different buffer layers used. According to numerical simulation the highest conversion efficiency (23%) of CIGS solar cell is reached for the CdS buffer layer. This result is validated by experimental results (20%). At 300 K, when the thickness of the buffer layer (CdS, ZnS, ZnSe, InSe2) increases from 100 nm to 500 nm, with the other parameters maintained constant, the efficiency decreases. When the temperature increases from 300 K to 400 K, with the other parameters maintained constant, both open circuit voltage and conversion efficiency also decrease. The effect of dual buffer layers of ZnS/CdS has also been analysed and his efficiency increases of 3% than a single buffer CdS.

Highlights

  • The growth of the world’s population and industrial development of industrialized countries is leading to an increase in energy need

  • In order to improve the efficiency of CIGS based cell, we use the dual buffer and we studied their effect on photovoltaic (PV) parameters

  • The cadmium sulfide (CdS) buffer layer is replaced with fours materials

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Summary

Introduction

The growth of the world’s population and industrial development of industrialized countries is leading to an increase in energy need. Current energy production is mainly based on fossil fuels but it pollutes the environment and raises the relative proportion of greenhouse gases in the atmosphere. The detrimental effects of non-renewable resources on our environment have led to a greater awareness generating the conference of PARIS [1]. This conference of PARIS encouraged the use of renewable energies like photovoltaic energy.

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