Abstract
The effect of the signal that is induced by the external ultrashort-pulse electromagnetic radiation on the physical processes in the silicon p-n junctions of the input semiconductor circuits of the TTL ICs is numerically simulated. It is demonstrated that the modulation of the base conductivity, avalanche generation, and thermal heating predominantly affect the current flow under such conditions. The possible types of failures of the TTL ICs in the presence of the ultrashort-pulse electromagnetic radiation are determined.
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