Abstract
Concentrator Photovoltaic (CPV) cells are the most efficient class of solar cells among the PV family. Usually, three junction solar cells have been used for the concentrator photovoltaic arrangements. The numerical simulation of high-efficiency concentrator multijunction solar cells (MJSC): GaInP 2 /GaAs/Ge and GaInP 2 /GaAs/GaAs 0.92 Bi 0.08 have been carried out by using an advanced simulation tool MSCS-1D: V2. The short-circuit current density (Jsc), open-circuit voltage (Voc), current density (Jm) and voltage (Vm) at maximum power point, fill-factor (FF) and conversion efficiency (η) of these MJSCs were found to be 16.01 mA/cm2, 2.59 V, 15.84 mA/cm2, 2.48V, 0.94 and 43.6% for GaInP 2 /GaAs/Ge solar cell and 16.01 mA/cm2, 2.75 V, 15.85 mA/cm2, 2.63V, 0.94 and 46.3% for GaInP 2 /GaAs/GaAs 0.92 Bi 0.08 respectively. The simulations have been performed for both MJSCs up to 500 suns under direct normal concentrating condition. From the normal and concentrating sun conditions, this study suggests that the III-V bismide material, GaAsBi leads to a decent enhancement of solar cell efficiency compared to the existing similar type of MJSCs.
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