Abstract
The scaling of conventional MOS bulk transistors with gate lengths below 100 nm seems to be difficult due to short channel effects. Especially the adjustment of the threshold voltage Vth is difficult because of the rapid drop down at shorter gate lengths. For low power consumption and high speed applications SOI technologies have been developed, but floating body effects, increasing leakage currents, kink phenomena and decreased heat dissipation occur in SOI-FETs.
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