Abstract
The solar cell structure based on indium gallium nitride (InGaN) as the absorber layer is simulated using the one dimension (1D) simulation program 'Analysis of Microelectronic and Photonic Structures' (AMPS) that was initially developed at the Pennsylvania State University, USA. In this paper, I have used the global air mass AM 1.5G (one sun) illumination (100mW/cm 2 , 0.30µm-1.1µm) to calculate the optimum efficiency of single junction solar cells with different band gap energy (Eg) varies from 1.12eV to 1.92eV by varying mole fraction ( ) of In with and without un-doped (i) layer between p and n layers of the cell. The optimal efficiencies of solar cells are obtained, respectively, 28.088% without i-layer for corresponding to Eg of 1.40 eV and for the total device thickness (L) of 400 nm and 27.411% with i-layer of same incorporating between p and n layers of the cell of (0.46) corresponding to Eg of 1.80 eV and for lowering L to 290 nm by considering high quality InGaN. In the simulation, the current density-voltage (J-V) characteristics are performed by varying Eg and the quantum efficiency by varying L from 400 nm to 4000 nm. Keywords - AMPS-1D simulation, conversion efficiency, InGaN thin film, solar cell, quantum efficiency
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