Abstract
Abstract Chemical vapor deposition of silicon carbide from methyltrichlorosilane in hydrogen carrier gas is modeled. The governing fluid flow, energy, and species conservation equations are solved numerically in two dimensions. A kinetic model consisting of fourteen chlorosilane and hydrocarbon reactions is used. Results are presented in terms of flow patterns, species distributions, and growth parameters for various reactor pressures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
