Abstract
The effect of scaling the channel length and oxide thickness in Si thin film transistors has been studied by numerical simulation solving the two-dimensional Poisson and current continuity equations. Our results show that the threshold voltage is lowered at shorter channel lengths, and the subthreshold slope increases for channel lengths below a critical value exhibiting the drain-induced-barrier lowering effect. The field effective mobility is also reduced when the channel length decreases, due to the charge sharing effect of mobile carriers pushed into the bulk. The threshold voltage and subthreshold slope decrease as the oxide thickness is reduced, but the field effective mobility remains unchanged.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
