Abstract
Heat cleaning is one of the most widely used methods for preparing GaAs photocathode. The GaAs photocathode obtained by heat cleaning can obtain high sensitivity. The temperature, stress and strain of GaAs photocathode during heat cleaning significantly affect the activation sensitivity and resolution. However, it is very difficult to accurately measure the temperature, stress and strain of GaAs photocathode during heat cleaning. Therefore, it is of great significance to simulate the temperature, stress and strain of GaAs photocathode during heat cleaning. In this study, the mathematical models of GaAs photocathode, glass, fixture and heating apparatus during heat cleaning were developed. Then, coupled with thermal radiation and heat conduction, the transient temperature distributions of GaAs photocathode, glass, fixture and heating apparatus during heat cleaning were obtained. Finally, the stress and strain of photocathode, glass, and fixture were investigated by coupling heat transfer and mechanical properties.
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