Abstract
In the present paper, a pin hetero-structure based on InxGa1−xAs/InP material system has been modeled. The rigorous study through design of experiments (DOE) has been run for achieving optimum device performance at room temperature. A generic model has been formulated to understand the physical mechanisms inside the device under the appropriate biasing conditions. The developed model has been compared with experimentally fabricated structure. Different material parameters have been tuned to calibrate the experimental reported results. The calibrated model has been applied to the specified device structure to extract the optimized results. The effect of passivation has been analyzed in detail to assess the interfacial impact on detector performance in terms of I-V characteristics. The dark current associated with the proposed pin device structure has been found to be ≥ 26 nA/cm2 at 298 K with high quantum efficiency.
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