Abstract
We are developing a numerical simulation model for back-illuminated nBn detectors. This model is based on the simultaneous numerical solution of the carrier continuity equations and Poisson equation on a three-dimensional finite-element grid. This paper reports our initial results for one-dimensional simulations of a back-illuminated nBn device with an InAs absorber layer and an AlAsSb barrier layer. These results include spatial profiles for the energy bands and the hole concentration profiles for a wide range of bias voltages, temperatures, and illumination fluxes. These results help to illustrate the underlying physics of the nBn device. In particular, these results show the influence of the doping type and concentration in the barrier layer on the dark current and the photocurrent, and demonstrate that the quantum efficiency at zero bias voltage can be degraded significantly by barrier layer doping concentrations that are too high.
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