Numerical Simulation of Improvement of Voltage Profile and Reliability by Efficient Placement of Distributed Generation in Grid Connected System

Abstract

Many studies have been performed on the positioning of ideal capacitors in appropriation systems for the purposes of power factor modification, voltage profile enhancement, and loss reduction. Mechanical plants with variable load conditions, in particular, have large inductive loads and a low power factor. Much of the time, a client's primary reason for building a capacitor bank is to keep a strategic distance from power bill penalties. The power factor is a ratio of true power to apparent power that indicates how much true power electrical equipment absorbs. Inductive or capacitive reactance, as well as harmonics in the circuit, induce a power factor of some importance other than solidarity. By minimizing power losses, the framework could be able to achieve a longer life expectancy and improved dependability. By choosing the right size, area, and cost of capacitor bank, different techniques have been used to minimize power losses financially. The issue of capacitor allocation in electrical distribution systems involves rising energy and lowering pinnacle power misfortune by capacitor establishment methods. This paper introduces a novel method for evaluating framework competitor hubs in a capacitor structure conveyance device using inexact thought. The capacitor placement technique is divided into two sections: to some extent one, misfortune affectability factors are used to choose the up-and-comer areas for the capacitor situation, and to a lesser extent two, the genetic algorithm technique is used to recognize the capacitor measures for minimizing energy losses and improving voltage profiles through capacitor placement. The proposed strategy is implemented on the IEEE-34 bus system, and the target feature is achieved using a genetic algorithm and enhanced particle swarm optimization. For the test case, the implemented device performed well in terms of loss reduction and voltage profile change.