Abstract
We present a simulation-based approach for characterizing hot-carrier degradation in SOI MOSFETs, which includes models for hot-carrier injection, carrier transport, and carrier trapping in the gate oxide. This approach clearly illustrates the physical mechanisms responsible for hot-carrier degradation in SOI MOSFETs. To suppress the hot-carrier effect, we have also proposed the SOI LDDMOSFET structure and the simulation results have been compared with each other.
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