Numerical simulation of homojunction p-i-n In0.4Ga0.6N solar cell with different absorber layer configurations

Abstract

The effects of thickness, carrier densities, and absorber layer (p-In0.4Ga0.6N) configurations were evaluated. Numerical studies were performed to optimize the homojunction p-i-n In0.4Ga0.6N solar cell using SCAPS-1D. With the optimized thicknesses and carrier densities, the p-i-n In0.4Ga0.6N solar cell shows a maximum conversion efficiency of 18.74 %. By changing the fixed indium composition of the absorber layer into step- and linear-graded configurations, the conversion efficiency, open-circuit voltage, and short-circuit current density of the solar cell were further improved. The results showed that the solar cells with step- and linear-graded absorbers attained maximum conversion efficiency of 19.77 % and 19.84 %, respectively. These results implied that the absorber with the graded compositional design helps to reduce the barrier height of electron-hole transport for band-to-band and inter-band absorption. This eventually reduces the energy loss caused by phonon emission and heat thermalization.