Numerical simulation of heat transfer in semiconductor heterostructures

Abstract

The paper deals with the construction of numerical models of heat transfer in a multilayer AlAs/GaAs nanostructure. The problem is solved using a hybrid finite-difference-mesh-free method based on radial-basis functions. The obtained solutions are compared for various bases, as well as with and without normalization of the approximating model. The possibility of increasing the speed of computations due to the parallelizability of computations is investigated, it is shown that, using multiprocessor systems, one can achieve a significant increase in performance.